联系方式：
E-mail: tsuijian@gmail.com
通讯地址：
雁翔路99 号西一楼
西安交通大学前沿科学技术研究院
邮编710054
目前职位：
2011.9 - 博士后 多学科材料研究中心，前沿科学技术研究院，西安交通大学
教育背景:
2008.9 - 2011.7 理学博士, 复旦大学，物理系凝聚态物理专业，导师: 蒋最敏教授
2001.9 - 2004.7 理学硕士, 复旦大学，物理系凝聚态物理专业，导师: 蒋最敏教授
1997.9 - 2001.6 理学学士, 复旦大学，材料科学系物理电子专业
发表论文:
(最新引用数据参考网页http://www.researcherid.com/rid/C-5175-2009)
1. Y. Q. Xu, W. F. Su, T. X. Nie, J. Cui, et al., Hall resistivity of Fe doped Si film at low temperatures Appl. Phys. Lett. 98 112109 (2011).
2. T. Ji, J. Cui, T. X. Nie, et al., Single crystalline Tm2O3 films grown on Si (001) by atomic oxygen assisted molecular beam epitaxy J. Cryst. Growth 321 171 (2011).
3. J. Cui, Y. Lv, X. J. Yang, et al., Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy Nanotechnology 22 125601 (2011).
4. Y. J. Ma, J. Cui,* Y. L. Fan, et al., Ordered GeSi nanorings grown on patterned Si(001)
substrates Nanoscale Res. Lett. 6 205 (2011).
5. J. Cui, J. H. Lin, Y. Q. Wu, et al., Formation of nanopits in Si capping layers on SiGe
quantum dots Nanoscale Res. Lett. 6 59 (2011).
6. S. L. Zhang, F. Xue, R. Wu, J. Cui, et al., Conductive atomic force microscopy studies on the transformation of GeSi quantum dots to quantum rings Nanotechnology 20 135703 (2009).
7. J. H. Lin, Y. Q. Wu, J. Cui, et al., Formation of planar defects over GeSi islands in Si capping layer grown at low temperature J. Appl. Phys. 105, 024307 (2009).
8. Y. Q. Wu, J. Zou, F. H. Li, J. Cui, et al., The stability of faceted SiGe quantum dots capped with a thin Si layer Nanotechnology 18, 025404 (2007).
9. S. Sadofev, S. Blumstengel, J. Cui, et al., Visible band-gap ZnCdO heterostructures grown by olecular beam epitaxy Appl. Phys. Lett. 89, 201907 (2006).
10. S. Sadofev, S. Blumstengel, J. Cui, et al., Uniform and efficient UV-emitting ZnO/ZnMgO
multiple quantum wells grown by radical-source molecular beam epitaxy Jpn. J. Appl. Phys.
45, L1250 (2006).
11. J. Cui, S. Sadofev, S. Blumstengel, et al., Optical gain and lasing of ZnO/ZnMgO multiple quantum wells: From low to room temperature Appl. Phys. Lett. 89, 051108 (2006).
12. Y. Q. Wu, F. H. Li, J. Cui, et al., Shape change of SiGe islands with initial Si capping Appl.Phys. Lett. 87, 223116 (2005).
13. F. Xue, J. Qin, J. Cui, et al., Studying the lateral composition in Ge quantum dots on Si(001)by conductive atomic force microscopy Surface Science 592, 65 (2005).
14. S. Sadofev, S. Blumstengel, J. Cui, et al., Growth of high-quality ZnMgO epilayers and
ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire
Appl. Phys. Lett. 87, 091903 (2005).
15. J. Qin, F. Xue, Y. Wang, L. H. Bai, J. Cui, et al., Phosphorus-mediated growth of Ge quantum dots on Si(001) J. Cryst. Growth 278, 136 (2005).
16. Q. He, Q. J. Jia, X. M. Jiang, J. Cui and Z. M. Jiang, Study of Si caplayer influence on
microstructure of Ge/Si quantum dots by grazing incident X-ray diffraction High Energy Phys.
Nuc. (Chinese Edition) 27, 49 (2003).
17. J. Cui, Q. He, X. M. Jiang, et al., Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy Appl. Phys. Lett. 83, 2907 (2003).
